View HAF2026RJ-EL-E_206691.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Preliminary Datasheet
HAF2026RJ
Silicon N Channel Power MOS FET Power Switching
Description
R07DS0122EJ0300 (Previous: REJ03G1255-0200) Rev.3.00 Sep 01, 2010
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (5 to 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 (FP-8DAV))
8 5 76
D D 7 8 D 5 D 6
1
2 G
4 23
Current Limitation Circuit Gate Shut-down Circuit
4 G Gate Resistor
Gate Resistor
Current Limitation Circuit Gate Shut-down Circuit 3 S
Temperature Sensing Circuit
Latch Circuit
Temperature Sensing Circuit 1 S
Latch Circuit
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Ratings Drain to source voltage VDSS 60 Gate to source voltage VGSS 16 Gate to source voltage VGSS -2.5 Drain current ID 0.6 Body-drain diode reverse drain current IDR 1 Note3 Avalanche current IAP 0.6 Avalanche energy EARNote3 1.54 Cannel dissipation PchNote1 1 Cannel dissipation PchNote2 1.5 Cannel temperature Tch 150 Storage temperature Tstg -55 to +150 Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 2. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. Tc = 25C, Rg 50 Unit V V V A A A mJ W W C C
R07DS0122EJ0300 Rev.3.00 Sep 01, 2010
Page 1 of 7
HAF2026RJ
Preliminary
Typical Operation Characteristics
(Ta=25C)
Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation) Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min 3.5 -- -- -- -- -- -- -- 3.5 0.6 Typ -- -- -- -- -- 0.53 0.23 175 -- -- Max -- 1.2 100 50 10 -- -- -- 12 1.0 Unit V V A A A mA mA C V A Test Conditions
Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Cannel temperature Vi = 5 V, VDS = 3 V
Electrical Characteristics
(Ta = 25C)
Item Drain current Symbol ID1 ID2 ID3 V(BR)DSS V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS1 IDSS2 VGS(off) |yfs| RDS(on) RDS(on) Coss td(on) tr td(off) tf VDF trr tos1 tos2 Min 0.25 -- 0.6 60 16 -2.5 -- -- -- -- -- -- -- -- 1.4 0.26 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- 0.53 0.23 -- -- -- 1.3 200 150 140 2.9 11 0.9 1 0.9 61 85 30 Max -- 10 1.0 -- -- -- 100 50 10 -100 -- -- 10 10 2.5 -- 300 210 -- -- -- -- -- -- -- -- -- Unit A mA A V V V A A A A mA mA A A V S m m pF s s s s V ns ms ms Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V VGS = 5 V, VDS = 3 V ID = 10 mA, VGS = 0 IG = 800 A, VDS = 0 IG = -100 A, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = -2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 48 V, VGS = 0, Ta = 125C VDS = 10 V, ID = 1 mA ID = 0.5 A, VDS = 10 VNote4 ID = 0.5 A, VGS = 5 VNote4 ID = 0.5 A, VGS = 10 VNote4 VDS = 10 V, VGS = 0, f = 1MHz VGS = 5 V, ID= 0.5 A, RL = 60
Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current
Input current (shut down) Zero gate voltage drain current Gate to source cut off voltage Forward transfer admittance Static drain to source on state resistance Output capacitance Turn-on delay time Rise time Turn off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down note5 operation time
IF = 1 A, VGS = 0 IF = 1 A, VGS = 0, diF/dt = 50 A/s VGS = 5 V, VDD = 16 V VGS = 5 V, VDD = 24 V
Notes: 4. Pulse test 5. Including the junction temperature rise of the over lorded condition.
R07DS0122EJ0300 Rev.3.00 Sep 01, 2010
Page 2 of 7
HAF2026RJ
Preliminary
Main Characteristics
Power vs. Temperature Derating
4.0 10 Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm), (PW 10s) 3 1
PW
1 ms
Maximum Safe Operation Area
Thermal shut down operation area
Channel Dissipation Pch (W)
3.0
Drain Current ID (A)
2.0
0.3 0.1
=
2D
1.0
riv
er
Op
1D
era
Operation in this area is limited by RDS(on)
10
D C O n tio ra pe
m
s
< PW
N
rive
tio
n
e6 ot
rO
n
0.03 Ta = 25C 0.01 0.01 0.03 0.1 0.3
1 shot Pulse 1 Driver Operation
s 10
per
atio
0
50
100
150
200
1
3
10
30 100
Ambient Temperature Ta (C)
Drain Source Voltage VDS (V)
Note 6: When using the glass epoxy board. ( FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics 2.0 1.6 1.2 0.8 0.4
10 V 5V VGS = 3.5 V
Typical Transfer Characteristics 1.0
VDS = 10 V Pulse Test
Pulse Test
Drain Current ID (A)
Drain Current ID (A)
0.8 0.6 0.4 0.2
75C 25C Tc = -25C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V) Static Drain to Source State Resistance vs. Drain Current
Drain to Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (mV)
200 Pulse Test 160
Drain Source On Sate Resistance RDS(on) (m)
500 VGS = 5 V 200 100 50 VGS = 10 V
120 ID = 0.5 A
80
40
0.2 A
20 10 0.01 0.02 Pulse Test 0.05 0.1 0.2 0.5 1 2
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
R07DS0122EJ0300 Rev.3.00 Sep 01, 2010
Page 3 of 7
HAF2026RJ
Drain to Source On State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S) Drain Source On State Resistance RDS(on) (m)
500 10 VDS =10 V 3 Pulse Test 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 75C Pulse Test
Preliminary
Forward Transfer Admittance vs. Drain Current
Tc = -25C
400 ID = 0.5 A, 0.2 A 300 VGS = 5 V 200 ID = 0.5 A, 0.2 A 100 0 -25 VGS = 10 V
25C
0
25
50
75
100 125 150
1
Case Temperature Tc (C)
Drain Current ID (A)
Body to Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
1000 500 200 100 50 20 10 5 2 1 0.01 0.02 di / dt = 50 A / s VGS = 0, Ta = 25C 0.05 0.1 0.2 0.5 1 100 30 10 3 1 0.3
Switching Characteristics
VGS = 5 V, VDD = 30 V PW = 300 s, duty < 1 % tr td(on) tf td(off)
Switching Time t (s)
0.1 0.001 0.003 0.01 0.03
0.1
0.3
1
Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage
1.0
Drain Current ID (A) Typical capacitance vs. Drain to Source Voltage
1000
Reverse Drain Current IDR (A)
Pulse Test
0.8
Capacitance Coss (pF)
100
0.6
VGS = 5 V
0V
0.4
10
0.2
VGS = 0 f = 1 MHz 1 0 10 20 30 40 50
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage VSD (V)
Drain to Source VDS (V)
R07DS0122EJ0300 Rev.3.00 Sep 01, 2010
Page 4 of 7
HAF2026RJ
Gate to Source Voltage vs. Shutdown Time of Load-Short Test
Shutdown Case Temperature Tc (C) Gate to Source Voltage VGS (V)
12 10 8 6 24 V 4 2 0 0.001 VDD = 16 V 200
Preliminary
Shutdown Case Temperature vs. Gate to Source Voltage
180
160
140
120 100 0
ID = 0.2 A
0.01
0.1
1
2
4
6
8
10
Shutdown Time of Lord-Short Test PW (S) Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
2.0 IAP = 0.6 A VDD = 25 V duty < 0.1 % Rg > 50
Gate to Source Voltage VGS (V)
1.5
1
0.5
0 25
50
75
100
125
150
Channel Temperature Tch (C)
Avalanche Test Circuit
Avalanche Waveform
1 2 VDSS * L * IAP2 * VDSS - VDD
VDS Monitor
L IAP Monitor
EAR =
V(BR)DSS IAP VDD ID VDS
Rg
D. U. T
Vin 5V
50 0 VDD
R07DS0122EJ0300 Rev.3.00 Sep 01, 2010
Page 5 of 7
HAF2026RJ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
Preliminary
Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
p ot uls e
ch-f(t) = s (t) * ch - f ch-f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
PDM PW T
0.001
1s
h
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
uls e
ch-f(t) = s (t) * ch - f ch-f = 166C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
PDM PW T
0.001
1s h
p ot
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor D.U.T. RL VDD = 30 V Vin Vout Vin 5V 50 Vout Monitor
Switching Time Waveform
90% 10% 10% 10%
90%
90% td(off) tf
td(on)
tr
R07DS0122EJ0300 Rev.3.00 Sep 01, 2010
Page 6 of 7
HAF2026RJ
Preliminary
Package Dimensions
Package Name SOP-8 JEITA Package Code P-SOP8-3.95 x 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g
*1 D
F
8
5
*2 E HE
bp
Index mark
1
Z e
4
* 3 bp xM
c
Terminal cross section (Ni/Pd/Au plating)
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
Reference Symbol
Dimension in Millimeters
Min
L1
L
D E A2 A1 A bp b1 c c1 HE e x y Z L L1
Nom Max 4.90 5.3 3.95
A
0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25
A1
y
Detail F
0 8 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08
Ordering Information
Part Name HAF2026RJ-EL-E Quantity 2500 pcs Taping Shipping Container
R07DS0122EJ0300 Rev.3.00 Sep 01, 2010
Page 7 of 7
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) (Note 2) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Dusseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141
http://www.renesas.com
(c) 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0

▲Up To Search▲

Price & Availability of HAF2026RJ-EL-E

	To Download HAF2026RJ-EL-E Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .